PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications
نویسندگان
چکیده
To fundamentally solve the bottleneck of Von Neumann’s computing architecture, a neuromorphic thin-film transistor (NTFT) employing Pb(Zr, Ti)O3 (PZT) was investigated. The indium gallium zinc oxide (IGZO) channel back gate TFT structure chosen to diffusion atoms that form layer during annealing process for crystallization PZT. A post-deposition with IGZO after PZT and using an oxide-based material as can minimize phenomenon junction materials oxygen together, which leads high reliable performance NTFT. basic operations synapses short-term memory (STM) long-term (LTM) were also analyzed confirm application device. dielectric constant polarization properties allow power consumption spike signals used in dependent plasticity change be reduced 10 pJ. Moreover, wide dynamic range Gmax / Gmin ≅ 1000 obtained, conductance maintained over 40000 seconds. optimized pulse achieved multi-level states (>32), made learning efficient. This study verified PZT-TFT has potential merits devices.
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2021
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2021.3119607